UNRL110 Datasheet, PDF (1/6 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type

Transistors with built-in Resistor
UNRL110/111/113/114/115
Silicon PNP epitaxial planer type
For digital circuit
I Features
• Mold leadless type package, allowing downsizing and thinning of
the equipment and automatic insertion through the tape packing.
• The PCB mounting area is 1/10 of that of lead type package (3-pin
MINI-type package).
3
2
Unit: mm
0.020±0.010
4
1
1.00±0.05
0.60±0.05
4
1
I Resistance by Part Number
• UNRL110
• UNRL111
• UNRL113
• UNRL114
• UNRL115
Marking Symbol
P
A
B
R
M
(R₁)
47 kΩ
10 kΩ
47 kΩ
10 kΩ
10 kΩ
(R₂)

10 kΩ
47 kΩ
47 kΩ

I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation ^*
Junction temperature
Storage temperature
V_CBO
−50
V
V_CEO
−50
V
I_C
−100
mA
P_T
150
mW
T_j
125
°C
T_stg
−55 to +125
°C
Note) *: Printed circuit board copper foil for collector portion
area: 20.0 mm² or more, thickness: 1.6 mm
3
0.30±0.03
0.60
2
0.05±0.03
1: Base
2: Emitter
3: Collector
4: Collector
ML4-N1 Package
Internal Connection
3
2
R₂
4
R₁
1
I Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff UNRL111
current
UNRL114
I_CBO
V_CB = −50 V, I_E = 0
I_CEO
V_CE = −50 V, I_B = 0
I_EBO
V_EB = −6 V, I_C = 0
UNRL113
UNRL110/115
Collector to base voltage
Collector to emitter voltage
Forward current UNRL111
transfer ratio
UNRL113/114
V_CBO
V_CEO
h_FE
I_C = −10 µA, I_E = 0
I_C = −2 mA, I_B = 0
V_CE = −10 V, I_C = −5 mA
UNRL110/115
Collector to emitter saturation voltage V_CE(sat) I_C = −10 mA, I_B = − 0.3 mA
Min Typ Max Unit
− 0.1 µA
− 0.5
− 0.5 mA
− 0.2
− 0.1
− 0.01
−50
V
−50
V
35
80
160
460
− 0.25 V
Publication date: July 2001
SJH00044AED
1