UNRF2A7 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar transistor

Transistors with built-in Resistor
UNRF2A7
Silicon NPN epitaxial planar transistor
For digital circuits
■ Features
• Suitable for high-density mounting and downsizing of the equip-
ment for Ultraminiature leadless package
0.6 mm × 1.0 mm (height 0.39 mm)
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
50
V
Collector-emitter voltage (Base open) V_CEO
50
V
Collector current
I_C
80
mA
Total power dissipation
P_T
100
mW
Junction temperature
T_j
125
°C
Storage temperature
T_stg −55 to +125 °C
Unit: mm
3
2
1
1.00±0.05
0.39⁺−00..0031
0.25±0.05
0.25±0.05
1
3
2
0.65±0.01
0.05±0.03
Marking Symbol: 1Z
Internal Connection
1: Base
2: Emitter
3: Collector
ML3-N2 Package
R₁ (22 kΩ)
C
B
E
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) V_CBO I_C = 10 µA, I_E = 0
50
V
Collector-emitter voltage (Base open) V_CEO I_C = 2 mA, I_B = 0
50
V
Collector-base cutoff current (Emitter open) I_CBO V_CB = 50 V, I_E = 0
0.1
µA
Collector-emitter cutoff current (Base open) I_CEO V_CE = 50 V, I_B = 0
0.5
µA
Emitter-base cutoff current (Collector open) I_EBO V_EB = 6 V, I_C = 0
0.01 mA
Forward current transfer ratio
h_FE V_CE = 10 V, I_C = 5 mA
160
460

Collector-emitter saturation voltage
V_CE(sat) I_C = 10 mA, I_B = 0.3 mA
0.25
V
Output voltage high level
V_OH V_CC = 5 V, V_B = 0.5 V, R_L = 1 kΩ
4.9
V
Output voltage low level
V_OL V_CC = 5 V, V_B = 2.5 V, R_L = 1 kΩ
0.2
V
Input resistance
R₁
−30% 22 +30% kΩ
Transition frequency
f_T
V_CB = 10 V, I_E = −2 mA, f = 200 MHz
150
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: December 2002
SJH00074AED
1