UNRF2A0 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar transistor

Transistors with built-in Resistor
UNRF2A0
Silicon NPN epitaxial planar transistor
For digital circuits
Unit: mm
I Features
• Suitable for high-density mounting and downsizing of the equip-
ment for Ultraminiature leadless package
0.6 mm × 1.0 mm (height 0.39 mm)
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
50
V
Collector-emitter voltage (Base open) V_CEO
50
V
Collector current
I_C
80
mA
Total power dissipation
P_T
100
mW
Junction temperature
T_j
125
°C
Storage temperature
T_stg −55 to +125 °C
3
2
1
1.00±0.05
0.39⁺−00..0031
0.25±0.05
0.25±0.05
1
3
2
0.65±0.01
0.05±0.03
Marking Symbol: 4X
Internal Connection
1: Base
2: Emitter
3: Collector
ML3-N2 Package
C
B
R₁
I Electrical Characteristics T_a = 25°C ± 3°C
R_{2 E}
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Input resistance
Resistance ratio
Transition frequency
V_CBO
V_CEO
I_CBO
I_CEO
I_EBO
h_FE
V_CE(sat)
V_OH
V_OL
R₁
R₁ / R₂
f_T
I_C = 10 µA, I_E = 0
I_C = 2 mA, I_B = 0
V_CB = 50 V, I_E = 0
V_CE = 50 V, I_B = 0
V_EB = 6 V, I_C = 0
V_CE = 10 V, I_C = 5 mA
I_C = 10 mA, I_B = 0.3 mA
V_CC = 5 V, V_B = 0.5 V, R_L = 1 kΩ
V_CC = 5 V, V_B = 2.5 V, R_L = 1 kΩ
V_CB = 10 V, I_E = −2 mA, f = 200 MHz
50
50
0.1
0.5
0.01
160
460
0.25
4.9
0.2
−30% 47 +30%
R₂ = ∞
150
V
V
µA
µA
mA

V
V
V
kΩ

MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: January 2004
SJH00093AED
1