UNR5225 Datasheet, PDF (1/5 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type

Transistors with built-in Resistor
UNR5225/5226/5227
Silicon NPN epitaxial planar type
For muting
■ Features
• Low collector-emitter saturation voltage V_CE(sat) , optimum for the
muting circuit
• The use with high current value is possible
■ Resistance by Part Number
Marking symbol
• UNR5225
FZ
• UNR5226
FY
• UNR5227
FW
(R₁)
10 kΩ
4.7 kΩ
6.8 kΩ
(R₂)


6.8 kΩ
0.3^{+–00..01}
3
1
2
(0.65) (0.65)
1.3±0.1
2.0±0.2
10˚
Unit: mm
0.15^{+–00..0150}
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
30
V
Collector-emitter voltage (Base open) V_CEO
20
V
Emitter-base voltage (Collector open) V_EBO
5
V
Collector current
I_C
600
mA
Total power dissipation
P_T
150
mW
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
Internal Connection
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
R₁
C
B
R₂
E
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current UNR5227
transfer ratio
UNR5225/5226
V_CBO
V_CEO
V_EBO
I_CBO
I_EBO
h_FE
I_C = 1 µA, I_E = 0
I_C = 1 mA, I_B = 0
I_E = 1 µA, I_C = 0
V_CB = 30 V, I_E = 0
V_EB = 5 V, I_C = 0
V_CE = 5 V, I_C = 50 mA
30
V
20
V
5
V
1
µA
1
µA
70

100
600
Collector-emitter saturation voltage
Input resistance UNR5226
UNR5227
V_CE(sat)
R₁
I_C = 50 mA, I_B = 2.5 mA
80 mV
−30% 4.7 +30% kΩ
6.8
UNR5225
10
Resistance ratio
ON resistance ^*
UNR5227
UNR5226
UNR5227
R₁/R₂
R_on
V_I = 7 V, R_L = 1 kΩ, f = 1 kHz
0.8 1.0 1.2

0.95
Ω
1.1
UNR5225
1.5
Transition frequency
f_T
V_CB = 10 V, I_E = −50 mA, f = 200 MHz
200
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. _*: Refer to R_on measurement circuit
Publication date: January 2004
SJH00043BED
1