UNR521W Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type

Transistors with built-in Resistor
UNR521W
Silicon NPN epitaxial planar type
For digital circuits
 Features
 Costs can be reduced through downsizing of the equipment and reduction of
the number of parts
 SMini type package allowing easy automatic insertion through tape packing
 Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open)
V_CBO
50
V
Collector-emitter voltage (Base open)
V_CEO
50
V
Collector current
I_C
100
mA
Total power dissipation
Junction temperature
Storage temperature
P_T
150
mW
T_j
150
°C
T_stg –55 to +150 °C
0.3^{+–00..01}
3
Unit: mm
0.15^{+–00..0150}
1
2
(0.65) (0.65)
1.3±0.1
2.0±0.2
10°
1: Base
2: Emitter
3: Collecter
Marking Symbol: 9F
Internal Connection
SMini3-G1 Package
C
B
R₂
(100 kΩ)
E
 Electrical Characteristics T_a = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
V_CBO
V_CEO
I_CBO
I_CEO
I_C = 10 µA, I_E = 0
I_C = 2 mA, I_B = 0
V_CB = 50 V, I_E = 0
V_CE = 50 V, I_B = 0
50
50
0.1
0.5
Emitter-base cutoff current (Collector open) I_EBO V_EB = 6 V, I_C = 0
100
Forward current transfer ratio
h_FE V_CE = 10 V, I_C = 5 mA
80
Collector-emitter saturation voltage
V_CE(sat) I_C = 10 mA, I_B = 0.3 mA
0.25
Input resistance
R₂
—30% 100 +30%
Transition frequency
f_T V_CB = 10 V, I_E = —2 mA, f = 200 MHz
100
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Unit
V
V
µA
µA
µA

V
kΩ
MHz
Publication date: December 2004
SJH00111AED
1