UNR5211 Datasheet, PDF (1/17 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type

Transistors with built-in Resistor
UNR521x Series (UN521x Series)
Silicon NPN epitaxial planar type
For digital circuits
■ Features
• Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
• S-Mini type package, allowing automatic insertion through the tape
packing and magazine packing
■ Resistance by Part Number
Marking symbol (R₁)
• UNR5210 (UN5210) 8L
47 kΩ
• UNR5211 (UN5211) 8A
10 kΩ
• UNR5212 (UN5212) 8B
22 kΩ
• UNR5213 (UN5213) 8C
47 kΩ
• UNR5214 (UN5214) 8D
10 kΩ
• UNR5215 (UN5215) 8E
10 kΩ
• UNR5216 (UN5216) 8F
4.7 kΩ
• UNR5217 (UN5117) 8H
22 kΩ
• UNR5218 (UN5218) 8I
0.51 kΩ
• UNR5219 (UN5219) 8K
1 kΩ
• UNR521D (UN521D) 8M
47 kΩ
• UNR521E (UN521E) 8N
47 kΩ
• UNR521F (UN521F) 8O
4.7 kΩ
• UNR521K (UN521K) 8P
10 kΩ
• UNR521L (UN521L) 8Q
4.7 kΩ
• UNR521M (UN521M) EL
2.2 kΩ
• UNR521N (UN521N) EX
4.7 kΩ
• UNR521T (UN521T) EZ
22 kΩ
• UNR521V (UN521V) FD
2.2 kΩ
• UNR521Z (UN521Z) FF
4.7 kΩ
(R₂)

10 kΩ
22 kΩ
47 kΩ
47 kΩ



5.1 kΩ
10 kΩ
10 kΩ
22 kΩ
10 kΩ
4.7 kΩ
4.7 kΩ
47 kΩ
47 kΩ
47 kΩ
2.2 kΩ
22 kΩ
0.3^{+–00..01}
3
Unit: mm
0.15^{+–00..0150}
1
2
(0.65) (0.65)
1.3±0.1
2.0±0.2
10˚
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
Internal Connection
R₁
C
B
R₂
E
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
50
V
Collector-emitter voltage (Base open) V_CEO
50
V
Collector current
I_C
100
mA
Total power dissipation
P_T
150
mW
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
Publication date: January 2004
Note) The part numbers in the parenthesis show conventional part number.
SJH00024CED
1