UNR4223 Datasheet, PDF (1/6 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type

Transistors with built-in Resistor
UNR4221/4222/4223/4224
(UN4221/4222/4223/4224)
Silicon NPN epitaxial planar type
4.0±0.2
2.0±0.2
Unit: mm
For digital circuits
0.75 max.
■ Features
• Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
• New S type package, allowing supply with the radial taping
■ Resistance by Part Number
• UNR4221 (UN4221)
• UNR4222 (UN4222)
• UNR4223 (UN4223)
• UNR4224 (UN4224)
(R₁)
2.2 kΩ
4.7 kΩ
10 kΩ
2.2 kΩ
(R₂)
2.2 kΩ
4.7 kΩ
10 kΩ
10 kΩ
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
50
V
Collector-emitter voltage (Base open) V_CEO
50
V
Collector current
I_C
500
mA
Total power dissipation
P_T
300
mW
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
0.45^{+–00..1200}
(2.5) (2.5)
123
Internal Connection
R₁
B
R₂
0.45^{+–00..1200}
0.7±0.1
1: Emitter
2: Collector
3: Base
NS-B1 Package
C
E
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base
UNR4221
cutoff current UNR4222
V_CBO
V_CEO
I_CBO
I_CEO
I_EBO
I_C = 10 µA, I_E = 0
I_C = 2 mA, I_B = 0
V_CB = 50 V, I_E = 0
V_CE = 50 V, I_B = 0
V_EB = 6 V, I_C = 0
(Collector open) UNR4223/4224
Forward current UNR4221
transfer ratio
UNR4222
h_FE
V_CE = 10 V, I_C = 100 mA
UNR4223/4224
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
V_CE(sat)
V_OH
V_OL
I_C = 100 mA, I_B = 5 mA
V_CC = 5 V, V_B = 0.5 V, R_L = 500 Ω
V_CC = 5 V, V_B = 3.5 V, R_L = 500 Ω
Min Typ Max Unit
50
V
50
V
1.0
µA
1.0
µA
5.0 mA
2.0
1.0
40

50
60
0.25
V
4.9
V
0.2
V
Note) The part numbers in the parenthesis show conventional part number.
Publication date: December 2003
SJH00021BED
1