UNR4121 Datasheet, PDF (1/7 Pages) Panasonic Semiconductor – UNR412x Series (UN412x Series) Silicon PNP epitaxial planar type

Transistors with built-in Resistor
UNR412x Series (UN412x Series)
Silicon PNP epitaxial planar type
For digital circuits
4.0±0.2
2.0±0.2
Unit: mm
■ Features
• Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
• New S type package, allowing supply with the radial taping
■ Resistance by Part Number
• UNR4121 (UN4121)
• UNR4122 (UN4122)
• UNR4123 (UN4123)
• UNR4124 (UN4124)
• UNR412X (UN412X)
• UNR412Y (UN412Y)
(R₁)
2.2 kΩ
4.7 kΩ
10 kΩ
2.2 kΩ
0.27 kΩ
3.1 kΩ
(R₂)
2.2 kΩ
4.7 kΩ
10 kΩ
10 kΩ
5 kΩ
4.6 kΩ
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
−50
V
Collector-emitter voltage (Base open) V_CEO
−50
V
Collector current
I_C
−500
mA
Total power dissipation
Junction temperature
Storage temperature
P_T
300
mW
T_j
150
°C
T_stg −55 to +150 °C
0.75 max.
0.45^{+–00..1200}
(2.5) (2.5)
123
Internal Connection
R₁
B
R₂
0.45^{+–00..1200}
0.7±0.1
1: Emitter
2: Collector
3: Base
NS-B1 Package
C
E
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
UNR412X
V_CBO
V_CEO
I_CBO
I_C = −10 µA, I_E = 0
I_C = −2 mA, I_B = 0
V_CB = −50 V, I_E = 0
Collector-emitter cutoff current (Base open) I_CEO V_CE = −50 V, I_B = 0
UNR412X
Emitter-base UNR4121
I_EBO
cutoff current UNR4122/412X/412Y
V_EB = −6 V, I_C = 0
(Collector open) UNR4123/4124
Min Typ Max Unit
−50
V
−50
V
−1
µA
− 0.1
−1
µA
− 0.5
−5
mA
−2
−1
Publication date: December 2003
Note) The part numbers in the parenthesis show conventional part number.
SJH00019BED
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