UNR411X Datasheet, PDF (1/15 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type

Transistors with built-in Resistor
UNR411x Series (UN411x Series)
Silicon PNP epitaxial planar type
For digital circuits
4.0±0.2
2.0±0.2
Unit: mm
■ Features
• Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
• New S type package, allowing supply with the radial taping
■ Resistance by Part Number
• UNR4110 (UN4110)
• UNR4111 (UN4111)
• UNR4112 (UN4112)
• UNR4113 (UN4113)
• UNR4114 (UN4114)
(R₁)
47 kΩ
10 kΩ
22 kΩ
47 kΩ
10 kΩ
• UNR4115 (UN4115)
10 kΩ
• UNR4116 (UN4116)
4.7 kΩ
• UNR4117 (UN4117)
• UNR4118 (UN4118)
• UNR4119 (UN4119)
• UNR411D (UN411D)
• UNR411E (UN411E)
• UNR411F (UN411F)
• UNR411H (UN411H)
• UNR411L (UN411L)
• UNR411M
22 kΩ
0.51 kΩ
1 kΩ
47 kΩ
47 kΩ
4.7 kΩ
2.2 kΩ
4.7 kΩ
2.2 kΩ
• UNR411N
4.7 kΩ
(R₂)

10 kΩ
22 kΩ
47 kΩ
47 kΩ



5.1 kΩ
10 kΩ
10 kΩ
22 kΩ
10 kΩ
10 kΩ
4.7 kΩ
47 kΩ
47 kΩ
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
−50
V
Collector-emitter voltage (Base open) V_CEO
−50
V
Collector current
I_C
−100
mA
Total power dissipation
P_T
300
mW
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
0.75 max.
0.45^{+–00..1200}
(2.5) (2.5)
123
Internal Connection
R₁
B
R₂
0.45^{+–00..1200}
0.7±0.1
1: Emitter
2: Collector
3: Base
NS-B1 Package
C
E
Publication date: December 2003
Note) The part numbers in the parenthesis show conventional part number.
SJH00018DED
1