UNR32AE Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type

Transistors with built-in Resistor
UNR32AE
Silicon NPN epitaxial planar type
For digital circuits
 Features
 Suitable for high-density mounting and downsizing of the equipment
 Contribute to low power consumption
0.33^{+–00..0025}
3
Unit: mm
0.10^{+–00..0025}
 Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open)
V_CBO
50
V
Collector-emitter voltage (Base open)
V_CEO
50
V
Collector current
I_C
80
mA
Total power dissipation
Junction temperature
Storage temperature
P_T
100
mW
T_j
125
°C
T_stg –55 to +125 °C
0.23^{+–00..0025}
12
(0.40) (0.40)
0.80±0.05
1.20±0.05
5°
1: Base
2: Emitter
3: Collector
SSSMini3-F1 Package
Marking Symbol: KC
Internal Connection
R₁ (47 kΩ)
C
B
R₂
(22 kΩ)
E
 Electrical Characteristics T_a = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
V_CBO
V_CEO
I_CBO
I_CEO
I_C = 10 µA, I_E = 0
I_C = 2 mA, I_B = 0
V_CB = 50 V, I_E = 0
V_CE = 50 V, I_B = 0
50
50
0.1
0.5
Emitter-base cutoff current (Collector open) I_EBO V_EB = 6 V, I_C = 0
0.2
Forward current transfer ratio
h_FE V_CE = 10 V, I_C = 5 mA
60
Collector-emitter saturation voltage
V_CE(sat) I_C = 10 mA, I_B = 0.3 mA
0.25
Output voltage high-level
V_OH V_CC = 5 V, V_B = 0.5 V, R_L = 1 kΩ
4.9
Output voltage low-level
V_OL V_CC = 5 V, V_B = 6 V, R_L = 1 kΩ
0.2
Input resistance
R₁
—30% 47 +30%
Resistance ratio
R₁ / R₂
1.7
2.1
2.6
Transition frequency
f_T V_CB = 10 V, I_E = —2 mA, f = 200 MHz
150
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Unit
V
V
µA
µA
mA

V
V
V
kΩ

MHz
Publication date: November 2004
SJH00106AED
1