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UNR32AA Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar transistor | |||
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Transistors with built-in Resistor
UNR32AA
Silicon NPN epitaxial planar transistor
For digital circuits
â Features
⢠Suitable for high-density mounting and downsizing of the equipment
⢠Contribute to low power consumption
â Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
50
V
Collector-emitter voltage (Base open) VCEO
50
V
Collector current
IC
80
mA
Total power dissipation
PT
100
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg â55 to +125 °C
0.33+â00..0025
3
0.23+â00..0025
12
(0.40) (0.40)
0.80±0.05
1.20±0.05
5°
Unit: mm
0.10+â00..0025
1: Base
2: Emitter
3: Collector
SSSMini3-F1 Package
Marking Symbol: HL
Internal Connection
R1 (100 kâ¦)
C
B
R2
(100 kâ¦)
E
â Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0
50
V
Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0
50
V
Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0
0.1
µA
Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0
0.5
µA
Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0
0.1 mA
Forward current transfer ratio
hFE VCE = 10 V, IC = 5 mA
80

Collector-emitter saturation voltage
VCE(sat) IC = 10 mA, IB = 0.3 mA
0.25
V
Output voltage high level
VOH VCC = 5 V, VB = 0.5 V, RL = 1 kâ¦
4.9
V
Output voltage low level
VOL VCC = 5 V, VB = 5 V, RL = 1 kâ¦
0.2
V
Input resistance
R1
â30% 100 +30% kâ¦
Resistance ratio
R1 / R2
0.75 1.0 1.25 
Transition frequency
fT
VCB = 10 V, IE = â2 mA, f = 200 MHz
150
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: November 2002
SJH00079AED
1
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