UNR31A4 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar transistor For digital circuits

Transistors with built-in Resistor
UNR31A4
Silicon PNP epitaxial planar transistor
For digital circuits
■ Features
• Suitable for high-density mounting and downsizing of the equipment
• Contribute to low power consumption
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
−50
V
Collector-emitter voltage (Base open) V_CEO
−50
V
Collector current
I_C
−80
mA
Total power dissipation
P_T
100
mW
Junction temperature
T_j
125
°C
Storage temperature
T_stg −55 to +125 °C
0.33^{+–00..0025}
3
0.23^{+–00..0025}
12
(0.40) (0.40)
0.80±0.05
1.20±0.05
5°
Unit: mm
0.10^{+–00..0025}
1: Base
2: Emitter
3: Collector
SSSMini3-F1 Package
Marking Symbol: CK
Internal Connection
R₁ (10 kΩ)
C
B
R₂
(47 kΩ)
E
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high level
Output voltage low level
Input resistance
Resistance ratio
Transition frequency
V_CBO
V_CEO
I_CBO
I_CEO
I_EBO
h_FE
V_CE(sat)
V_OH
V_OL
R₁
R₁ / R₂
f_T
I_C = −10 µA, I_E = 0
I_C = −2 mA, I_B = 0
V_CB = −50 V, I_E = 0
V_CE = −50 V, I_B = 0
V_EB = −6 V, I_C = 0
V_CE = −10 V, I_C = −5 mA
I_C = −10 mA, I_B = − 0.3 mA
V_CC = −5 V, V_B = − 0.5 V, R_L = 1 kΩ
V_CC = −5 V, V_B = −2.5 V, R_L = 1 kΩ
−50
−50
80
−4.9
−30%
0.17
V_CB = −10 V, I_E = 1 mA, f = 200 MHz
− 0.1
− 0.5
− 0.2
− 0.25
− 0.2
10 +30%
0.21 0.25
80
V
V
µA
µA
mA

V
V
V
kΩ

MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: November 2002
SJH00075AED
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