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UNR31A0 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type | |||
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Transistors with built-in Resistor
UNR31A0
Silicon PNP epitaxial planar type
For digital circuits
â Features
⢠Suitable for high-density mounting and downsizing of the equipment
⢠Contribute to low power consumption
â Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
â50
V
Collector-emitter voltage (Base open) VCEO
â50
V
Collector current
IC
â80
mA
Total power dissipation
PT
100
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg â55 to +125 °C
0.33+â00..0025
3
0.23+â00..0025
12
(0.40) (0.40)
0.80±0.05
1.20±0.05
5°
Unit: mm
0.10+â00..0025
1: Base
2: Emitter
3: Collector
SSSMini3-F1 Package
Marking Symbol: CD
Internal Connection
R1 (47 kâ¦)
C
B
E
â Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = â10 µA, IE = 0
â50
V
Collector-emitter voltage (Base open) VCEO IC = â2 mA, IB = 0
â50
V
Collector-base cutoff current (Emitter open) ICBO VCB = â50 V, IE = 0
â 0.1 µA
Collector-emitter cutoff current (Base open) ICEO VCE = â50 V, IB = 0
â 0.5 µA
Emitter-base cutoff current (Collector open) IEBO VEB = â6 V, IC = 0
â 0.1 mA
Forward current transfer ratio
hFE VCE = â10 V, IC = â5 mA
160
460

Collector-emitter saturation voltage
VCE(sat) IC = â10 mA, IB = â 0.3 mA
â 0.25 V
Output voltage high-level
VOH VCC = â5 V, VB = â 0.5 V, RL = 1 k⦠â4.9
V
Output voltage low-level
VOL VCC = â5 V, VB = â2.5 V, RL = 1 kâ¦
â 0.2 V
Input resistance
R1
â30% 47 +30% kâ¦
Transition frequency
fT
VCB = â10 V, IE = 1 mA, f = 200 MHz
80
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: October 2003
SJH00053BED
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