UNR2225 Datasheet, PDF (1/5 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type

Transistors with built-in Resistor
UNR2225 (UN2225), UNR2226 (UN2226),
UNR2227 (UN2227)
Silicon NPN epitaxial planar type
For muting
0.40^{+–00..0150}
3
Unit: mm
0.16^{+–00..0160}
■ Features
• Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
• Mini type package allowing easy automatic insertion through tape
packing and magazine packing
■ Resistance by Part Number
• UNR2225
• UNR2226
• UNR2227
Marking Symbol (R₁)
(UN2225) FZ
10 kΩ
(UN2226) FY
4.7 kΩ
(UN2227) FW 6.8 kΩ
(R₂)


6.8 kΩ
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
30
V
Collector-emitter voltage (Base open) V_CEO
20
V
Emitter-base voltage (Collector open) V_EBO
5
V
Collector current
I_C
600
mA
Total power dissipation
P_T
200
mW
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
1
2
(0.95) (0.95)
1.9±0.1
2.90^{+–00..0250}
10˚
Internal Connection
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
R₁
C
B
R₂
E
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current UNR2227
transfer ratio UNR2225/2226
V_CBO
V_CEO
V_EBO
I_CBO
I_EBO
h_FE
I_C = 1 µA, I_E = 0
I_C = 2 mA, I_B = 0
I_E = 1 µA, I_C = 0
V_CB = 30 V, I_E = 0
V_EB = 5 V, I_C = 0
V_CE = 10 V, I_C = 100 mA
Collector-emitter saturation voltage
Input resistance UNR2226
UNR2227
V_CE(sat)
R₁
I_C = 50 mA, I_B = 2.5 mA
UNR2225
Resistance ratio UNR2227
R₁/R₂
Min Typ Max Unit
30
V
20
V
5
V
1
µA
1
µA
70

100
600
80 mV
−30% 4.7 +30% kΩ
6.8
10
0.8 1.0 1.2

Note) The part numbers in the parenthesis show conventional part number.
Publication date: December 2003
SJH00040CED
1