UNR2224 Datasheet, PDF (1/6 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type

Transistors with built-in Resistor
UNR222x Series (UN222x Series)
Silicon NPN epitaxial planar type
For digital circuits
■ Features
• Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
• Mini type package allowing easy automatic insertion through tape
packing and magazine packing
■ Resistance by Part Number
• UNR2221
• UNR2222
• UNR2223
• UNR2224
Marking Symbol (R₁)
(UN2221) 9A
2.2 kΩ
(UN2222) 9B
4.7 kΩ
(UN2223) 9C
10 kΩ
(UN2224) 9D
2.2 kΩ
(R₂)
2.2 kΩ
4.7 kΩ
10 kΩ
10 kΩ
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
50
V
Collector-emitter voltage (Base open) V_CEO
50
V
Collector current
I_C
500
mA
Total power dissipation
P_T
200
mW
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
0.40^{+–00..0150}
3
Unit: mm
0.16^{+–00..0160}
1
2
(0.95) (0.95)
1.9±0.1
2.90^{+–00..0250}
10˚
Internal Connection
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
R₁
C
B
R₂
E
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base UNR2221
cutoff current UNR2222
V_CBO
V_CEO
I_CBO
I_CEO
I_EBO
I_C = 10 µA, I_E = 0
I_C = 2 mA, I_B = 0
V_CB = 50 V, I_E = 0
V_CE = 50 V, I_B = 0
V_EB = 6 V, I_C = 0
(Collector open) UNR2223/2224
Forward current UNR2221
transfer ratio UNR2222
h_FE V_CE = 10 V, I_C = 100 mA
UNR2223/2224
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
V_CE(sat)
V_OH
V_OL
I_C = 10 mA, I_B = 5 mA
V_CC = 5 V, V_B = 0.5 V, R_L = 500 Ω
V_CC = 5 V, V_B = 3.5 V, R_L = 500 Ω
Min Typ Max Unit
50
V
50
V
1
µA
1
µA
5
mA
2
1
40

50
60
0.25
V
4.9
V
0.2
V
Note) The part numbers in the parenthesis show conventional part number.
Publication date: December 2003
SJH00012CED
1