UNR221W Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type

Transistors with built-in Resistor
UNR221W
Silicon NPN epitaxial planar type
For digital circuits
■ Features
• Base-emitter resistance R_BE: 100 kΩ,
• Mini type package, allowing downsizing of the equipment.
• Allowing automatic insertion through tape packing.
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
50
V
Collector-emitter voltage (Base open) V_CEO
50
V
Collector current
I_C
100
mA
Total power dissipation
P_T
200
mW
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
0.40^{+–00..0150}
3
Unit: mm
0.16^{+–00..0160}
1
2
(0.95) (0.95)
1.9±0.1
2.90^{+–00..0250}
10˚
Marking Symbol: 9F
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Internal Connection
C
B
R₂
(100 kΩ)
E
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Input resistance
Transition frequency
V_CBO
V_CEO
I_CBO
I_CEO
I_EBO
h_FE
V_CE(sat)
R₂
f_T
I_C = 10 µA, I_E = 0
I_C = 2 mA, I_B = 0
V_CB = 50 V, I_E = 0
V_CE = 50 V, I_B = 0
V_EB = 6 V, I_C = 0
V_CE = 10 V, I_C = 5 mA
I_C = 10 mA, I_B = 0.3 mA
50
V
50
V
0.1
µA
0.5
µA
100 µA
80
0.25
V
−30% 100 +30% kΩ
V_CB = 10 V, I_E = −2 mA, f = 200 MHz
100
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: December 2003
SJH00011BED
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