UNR2214 Datasheet, PDF (1/17 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar transistor

Transistors with built-in Resistor
UNR221x Series (UN221x Series)
Silicon NPN epitaxial planar transistor
For digital circuits
■ Features
• Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
• Mini type package allowing easy automatic insertion through tape
packing and magazine packing
■ Resistance by Part Number
Marking Symbol (R₁)
• UNR2210 (UN2210) 8L
47 kΩ
• UNR2211 (UN2211) 8A
10 kΩ
• UNR2212 (UN2212) 8B
22 kΩ
• UNR2213 (UN2213) 8C
47 kΩ
• UNR2214 (UN2214) 8D
10 kΩ
• UNR2215 (UN2215) 8E
10 kΩ
• UNR2216 (UN2216) 8F
4.7 kΩ
• UNR2217 (UN2217) 8H
22 kΩ
• UNR2218 (UN2218) 8I
0.51 kΩ
• UNR2219 (UN2219) 8K
1 kΩ
• UNR221D (UN221D) 8M
47 kΩ
• UNR221E (UN221E) 8N
47 kΩ
• UNR221F (UN221F) 8O
4.7 kΩ
• UNR221K (UN221K) 8P
10 kΩ
• UNR221L (UN221L) 8Q
4.7 kΩ
• UNR221M (UN221M) EL
2.2 kΩ
• UNR221N (UN221N) EX
4.7 kΩ
• UNR221T (UN221T) EZ
22 kΩ
• UNR221V (UN221V) FD
2.2 kΩ
• UNR221Z (UN221Z) FF
4.7 kΩ
(R₂)

10 kΩ
22 kΩ
47 kΩ
47 kΩ



5.1 kΩ
10 kΩ
10 kΩ
22 kΩ
10 kΩ
4.7 kΩ
4.7 kΩ
47 kΩ
47 kΩ
47 kΩ
2.2 kΩ
22 kΩ
0.40^{+–00..0150}
3
Unit: mm
0.16^{+–00..0160}
1
2
(0.95) (0.95)
1.9±0.1
2.90^{+–00..0250}
10˚
Internal Connection
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
R₁
C
B
R₂
E
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
50
V
Collector-emitter voltage (Base open) V_CEO
50
V
Collector current
I_C
100
mA
Total power dissipation
P_T
200
mW
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
Publication date: December 2003
Note) The part numbers in the parenthesis show conventional part number.
SJH00010CED
1