UNR212X Datasheet, PDF (1/7 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type

Transistors with built-in Resistor
UNR212x Series (UN212x Series)
Silicon PNP epitaxial planar type
For digital circuits
■ Features
• Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
• Mini type package allowing easy automatic insertion through tape
packing and magazine packing
■ Resistance by Part Number
Marking Symbol (R₁)
• UNR2121 (UN2121) 7A
2.2 kΩ
• UNR2122 (UN2122) 7B
4.7 kΩ
• UNR2123 (UN2123) 7C
10 kΩ
• UNR2124 (UN2124) 7D
2.2 kΩ
• UNR212X (UN212X) 7I
0.27 kΩ
• UNR212Y (UN212Y) 7Y
3.1 kΩ
(R₂)
2.2 kΩ
4.7 kΩ
10 kΩ
10 kΩ
5 kΩ
4.6 kΩ
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
−50
V
Collector-emitter voltage (Base open) V_CEO
−50
V
Collector current
I_C
−500
mA
Total power dissipation
P_T
200
mW
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
0.40^{+–00..0150}
3
Unit: mm
0.16^{+–00..0160}
1
2
(0.95) (0.95)
1.9±0.1
2.90^{+–00..0250}
10˚
Internal Connection
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
R₁
C
B
R₂
E
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
UNR212X
V_CBO
V_CEO
I_CBO
I_C = −10 µA, I_E = 0
I_C = −2 mA, I_B = 0
V_CB = −50 V, I_E = 0
−50
V
−50
V
−1.0 µA
− 0.1
Collector-emitter cutoff current (Base open) I_CEO V_CE = −50 V, I_B = 0
UNR212X
−1.0 µA
− 0.5
Emitter-base UNR2121
I_EBO
cutoff current UNR2122/212X/212Y
V_EB = −6 V, I_C = 0
−5
mA
−2
(Collector open) UNR2123/2124
−1
Forward current UNR2121
h_FE V_CE = −10 V, I_C = −5 mA
40

transfer ^{ratio UNR2122/212Y}
50
UNR2123/2124
60
UNR212X
20
Note) The part numbers in the parenthesis show conventional part number.
Publication date: December 2003
SJH00008CED
1