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UNR2111 Datasheet, PDF (1/17 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type
Transistors with built-in Resistor
UNR211x Series (UN211x Series)
Silicon PNP epitaxial planar type
For digital circuits
■ Features
• Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
• Mini type package allowing easy automatic insertion through tape
packing and magazine packing
■ Resistance by Part Number
Marking Symbol (R1)
• UNR2110 (UN2110) 6L
47 kΩ
• UNR2111 (UN2111) 6A
10 kΩ
• UNR2112 (UN2112) 6B
22 kΩ
• UNR2113 (UN2113) 6C
47 kΩ
• UNR2114 (UN2114) 6D
10 kΩ
• UNR2115 (UN2115) 6E
10 kΩ
• UNR2116 (UN2116) 6F
4.7 kΩ
• UNR2117 (UN2117) 6H
22 kΩ
• UNR2118 (UN2118) 6I
0.51 kΩ
• UNR2119 (UN2119) 6K
1 kΩ
• UNR211D (UN211D) 6M
47 kΩ
• UNR211E (UN211E) 6N
47 kΩ
• UNR211F (UN211F) 6O
4.7 kΩ
• UNR211H (UN211H) 6P
2.2 kΩ
• UNR211L (UN211L) 6Q
4.7 kΩ
• UNR211M (UN211M) EI
2.2 kΩ
• UNR211N (UN211N) EW 4.7 kΩ
• UNR211T (UN211T) EY
22 kΩ
• UNR211V (UN211V) FC
2.2 kΩ
• UNR211Z (UN211Z) FE
4.7 kΩ
(R2)

10 kΩ
22 kΩ
47 kΩ
47 kΩ



5.1 kΩ
10 kΩ
10 kΩ
22 kΩ
10 kΩ
10 kΩ
4.7 kΩ
47 kΩ
47 kΩ
47 kΩ
2.2 kΩ
22 kΩ
0.40+–00..0150
3
Unit: mm
0.16+–00..0160
1
2
(0.95) (0.95)
1.9±0.1
2.90+–00..0250
10˚
Internal Connection
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
R1
C
B
R2
E
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
−50
V
Collector-emitter voltage (Base open) VCEO
−50
V
Collector current
IC
−100
mA
Total power dissipation
PT
200
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
Publication date: December 2003
Note) The part numbers in the parenthesis show conventional part number.
SJH00006CED
1