UN9211 Datasheet, PDF (1/15 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer transistor

Transistors with built-in Resistor
UN9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/
921E/921F/921K/921L/UNR921M/921N/921AJ/921BJ/921CJ
Silicon NPN epitaxial planer transistor
For digital circuits
s ^Features
q Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
q SS-Mini type package, allowing automatic insertion through tape
packing and magazine packing.
1.6±0.15
0.4 0.8±0.1 0.4
Unit: mm
1
3
2
s ^{Resistance by Part Number}
Marking Symbol (R₁)
q UN9211
8A
10kΩ
q UN9212
8B
22kΩ
q UN9213
8C
47kΩ
q UN9214
8D
10kΩ
q UN9215
8E
10kΩ
q UN9216
8F
4.7kΩ
q UN9217
8H
22kΩ
q UN9218
8I
0.51kΩ
q UN9219
8K
1kΩ
q UN9210
8L
47kΩ
q UN921D
8M
47kΩ
q UN921E
8N
47kΩ
q UN921F
8O
4.7kΩ
q UN921K
8P
10kΩ
q UN921L
8Q
4.7kΩ
q UNR921M EL
2.2kΩ
q UNR921N EX
4.7kΩ
q UNR921AJ 8X
100kΩ
q UNR921BJ 8Y
100kΩ
q UNR921CJ 8Z
—
(R₂)
10kΩ
22kΩ
47kΩ
47kΩ
—
—
—
5.1kΩ
10kΩ
—
10kΩ
22kΩ
10kΩ
4.7kΩ
4.7kΩ
47kΩ
47kΩ
100kΩ
—
47kΩ
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
50
V
Collector to emitter voltage V_CEO
50
V
Collector current
I_C
100
mA
Total power dissipation
P_T
125
mW
Junction temperature
T_j
125
˚C
Storage temperature
T_stg
–55 to +125
˚C
0.2±0.1
1 : Base
2 : Emitter
3 : Collector
SS–Mini Type Pakage
Unit: mm
1.60±0.05
0.80
0.80±0.05
0.425 0.425
+0.05
0.85–0.03
1 : Base
2 : Emitter
3 : Collector
SS–Mini Flat Type Pakage (J type)
Internal Connection
R1
C
B
R2
E
1