UN8231 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer transistor

Transistors with built-in Resistor
UN8231/UN8231A
Silicon NPN epitaxial planer transistor
For switching
s ^Features
q High forward current transfer ratio h_FE.
q Resistor built-in type, allowing downsizing of the equipment and
reduction of the number of parts.
q Available in a type with radial taping.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to ^UN8231
base voltage _UN8231A
V_CBO
20
60
V
Collector to ^UN8231
emitter voltage _UN8231A
V_CEO
20
50
V
Peak collector current
I_CP
1.5
A
Collector current
I_C
0.7
A
Total power dissipation
P_T*
1
W
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 to +150
˚C
* Printed circuit board: Copper foil area of 1cm² or more and thickness of
1.7mm for the collector portion.
6.9±0.1
0.7 4.0
Unit: mm
1.05 2.5±0.1
±0.05
(1.45)
0.8
0.65 max.
+0.1
0.45–0.05
2.5±0.5 2.5±0.5
1
2
3
1 : Emitter
2 : Collector
3 : Base
MT-2 Type Package
Internal Connection
R1(1kΩ)
C
B
R2
(47kΩ)
E
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector to base voltage
UN8231
UN8231A
I_CBO
I_CEO
I_EBO
V_CBO
UN8231
Collector to emitter voltage
V_CEO
UN8231A
Forward current transfer ratio
Collector to emitter saturation voltage
Input resistance
Resistance ratio
h_FE*
V_CE(sat)*
R₁
Transition frequency
f_T
Conditions
V_CB = 15V, I_E = 0
V_CE = 15V, I_B = 0
V_EB = 14V, I_C = 0
I_C = 10µA, I_E = 0
I_C = 1mA, I_B = 0
V_CE = 10V, I_C = 150mA
I_C = 500mA, I_B = 5mA
R₁/R₂
V_CB = 10V, I_E = –50mA, f = 200MHz
min
20
60
20
50
800
0.7
0.016
typ max Unit
1
µA
10
µA
0.5
mA
V
V
2100
0.4
V
1
1.3
kΩ
0.021 0.025
200
MHz
*Pulse measurement
1