UN7231 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer transistor

Transistors with built-in Resistor
UN7231
Silicon NPN epitaxial planer transistor
For amplification of the low frequency
s ^Features
q High forward current transfer ratio h_FE.
q Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
20
V
Collector to emitter voltage V_CEO
20
V
Collector current
I_C
0.7
A
Peak collector current
I_CP
1.5
A
Total power dissipation
P_T*
1.0
W
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 to +150
˚C
* Printed circuit board: Copper foil area of 1cm² or more and thickness of
1.7mm for the collector portion.
4.5±0.1
1.6±0.2
Unit: mm
1.5±0.1
45°
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
321
0.4±0.04
marking
1 : Emitter
2 : Collector
3 : Base
EIAJ : SC–62
Mini-Power Type Package
Marking Symbol: IC
Internal Connection
R1(1kΩ)
C
B
R2
(47kΩ)
E
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Input resistance
Resistance ratio
I_CBO
I_CEO
I_EBO
V_CBO
V_CEO
h_FE
V_CE(sat)
f_T
R₁
R₁/R₂
V_CB = 15V, I_E = 0
V_CE = 15V, I_B = 0
V_EB = 14V, I_C = 0
I_C = 10µA, I_E = 0
I_C = 1mA, I_B = 0
V_CE = 10V, I_C = 150mA*
I_C = 500mA, I_B = 5mA*
V_CB = 20V, I_E = –20mA, f = 200MHz
min
20
20
800
0.7
0.016
typ max Unit
1
µA
10
µA
0.5
mA
V
V
2100
0.4
V
55
MHz
1
1.3
kΩ
0.021 0.025
*Pulse measurement
1