UN5154 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer transistor

Transistors with built-in Resistor
UN5154
Silicon PNP epitaxial planer transistor
For digital circuits
s ^Features
q High forward current transfer ratio h_FE.
q Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
q S-Mini type package, allowing automatic insertion through tape
packing and magazine packing.
0.425
2.1±0.1
1.25±0.1
Unit: mm
0.425
1
3
2
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
–30
V
Collector to emitter voltage V_CEO
–30
V
Collector current
I_C
–100
mA
Total power dissipation
P_T
150
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 to +150
˚C
0.2±0.1
1 : Base
2 : Emitter
3 : Collector
EIAJ : SC–70
S–Mini Type Package
Marking Symbol: EV
Internal Connection
R1(10kΩ)
C
B
R2
(47kΩ)
E
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Collector to base voltage
Collector to emitter voltage
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Output voltage high level
Output voltage low level
Input resistance
Resistance ratio
Transition frequency
V_CBO
V_CEO
I_CBO
I_CEO
I_EBO
h_FE
V_CE(sat)
V_OH
V_OL
R₁
R₁/R₂
f_T
Conditions
I_C = –10µA, I_E = 0
I_C = –2mA, I_B = 0
V_CB = –30V, I_E = 0
V_CE = –30V, I_B = 0
V_EB = –3V, I_C = 0
V_CE = –10V, I_C = –5mA
I_C = –50mA, I_B = – 0.33mA
V_CC = –5V, V_B = – 0.5V, R_L = 1kΩ
V_CC = –5V, V_B = –2.5V, R_L = 1kΩ
V_CB = –10V, I_E = 1mA, f = 200MHz
min
–30
–30
80
–4.9
–30%
typ max
– 0.1
– 0.5
– 0.1
– 0.5 –1.2
10
0.213
80
– 0.2
+30%
Unit
V
V
µA
µA
mA
—
V
V
V
kΩ
—
MHz
1