UN5111 Datasheet, PDF (1/17 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer transistor

Transistors with built-in Resistor
UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
Silicon PNP epitaxial planer transistor
For digital circuits
s ^Features
q Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
q S-Mini type package, allowing automatic insertion through tape
packing and magazine packing.
Unit: mm
0.425
2.1±0.1
1.25±0.1
0.425
1
3
2
s ^{Resistance by Part Number}
Marking Symbol
q UN5111
6A
q UN5112
6B
q UN5113
6C
q UN5114
6D
q UN5115
6E
q UN5116
6F
q UN5117
6H
q UN5118
6I
q UN5119
6K
q UN5110
6L
q UN511D
6M
q UN511E
6N
q UN511F
6O
q UN511H
6P
q UN511L
6Q
q UN511M
EI
q UN511N
EW
q UN511T
EY
q UN511V
FC
q UN511Z
FE
(R₁)
10kΩ
22kΩ
47kΩ
10kΩ
10kΩ
4.7kΩ
22kΩ
0.51Ω
1kΩ
47kΩ
47kΩ
47kΩ
4.7kΩ
2.2kΩ
4.7kΩ
2.2kΩ
4.7kΩ
22kΩ
2.2kΩ
4.7kΩ
(R₂)
10kΩ
22kΩ
47kΩ
47kΩ
—
—
—
5.1kΩ
10kΩ
—
10kΩ
22kΩ
10kΩ
10kΩ
4.7kΩ
47kΩ
47kΩ
47kΩ
2.2kΩ
22kΩ
0.2±0.1
1 : Base
2 : Emitter
3 : Collector
EIAJ : SC–70
S–Mini Type Package
Internal Connection
R1
C
B
R2
E
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
–50
V
Collector to emitter voltage V_CEO
–50
V
Collector current
I_C
–100
mA
Total power dissipation
P_T
150
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 to +150
˚C
1