UN4221 Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer transistor

Transistors with built-in Resistor
UN4221/4222/4223/4224
Silicon NPN epitaxial planer transistor
4.0±0.2
Unit: mm
For digital circuits
s ^Features
q Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
q New S type package, allowing supply with the radial taping.
s ^{Resistance by Part Number}
q UN4221
q UN4222
q UN4223
q UN4224
(R₁)
2.2kΩ
4.7kΩ
10kΩ
2.2kΩ
(R₂)
2.2kΩ
4.7kΩ
10kΩ
10kΩ
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
50
V
Collector to emitter voltage V_CEO
50
V
Collector current
I_C
500
mA
Total power dissipation
P_T
300
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 to +150
˚C
marking
123
1.27 1.27
2.54±0.15
1 : Emitter
2 : Collector
3 : Base
New S Type Package
Internal Connection
R1
C
B
R2
E
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
Collector cutoff current
Emitter
cutoff
current
UN4221
UN4222
UN4223/4224
I_CBO
I_CEO
I_EBO
V_CB = 50V, I_E = 0
V_CE = 50V, I_B = 0
V_EB = 6V, I_C = 0
Collector to base voltage
Collector to emitter voltage
Forward
current
transfer
ratio
UN4221
UN4222
UN4223/4224
Collector to emitter saturation voltage
Output voltage high level
Output voltage low level
Input
resis-
tance
UN4221/4224
UN4222
UN4223
V_CBO
V_CEO
h_FE
V_CE(sat)
V_OH
V_OL
R₁
I_C = 10µA, I_E = 0
I_C = 2mA, I_B = 0
V_CE = 10V, I_C = 100mA
I_C = 100mA, I_B = 5mA
V_CC = 5V, V_B = 0.5V, R_L = 500Ω
V_CC = 5V, V_B = 3.5V, R_L = 500Ω
Resistance ratio
R₁/R₂
UN4224
min
50
50
40
50
60
4.9
(–30%)
0.8
0.17
typ max Unit
1
µA
1
µA
5
2
mA
1
V
V
0.25
V
V
0.2
V
2.2
4.7 (+30%) kΩ
10
1.0
1.2
0.22 0.27
1