UN2221 Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer transistor

Transistors with built-in Resistor
UN2221/2222/2223/2224
Silicon NPN epitaxial planer transistor
For digital circuits
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
Unit: mm
0.65±0.15
s ^Features
q Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
q Mini type package, allowing downsizing of the equipment and
automatic insertion through tape packing and magazine packing.
1
3
2
s ^{Resistance by Part Number}
Marking Symbol
q UN2221
9A
q UN2222
9B
q UN2223
9C
q UN2224
9D
(R₁)
2.2kΩ
4.7kΩ
10kΩ
2.2kΩ
(R₂)
2.2kΩ
4.7kΩ
10kΩ
10kΩ
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
50
V
Collector to emitter voltage V_CEO
50
V
Collector current
I_C
500
mA
Total power dissipation
P_T
200
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 to +150
˚C
s ^{Electrical Characteristics (Ta=25˚C)}
0.1 to 0.3
0.4±0.2
1:Base
2:Emitter
3:Collector
EIAJ:SC-59
Mini Type Package
Internal Connection
R1
C
B
R2
E
Parameter
Symbol
Conditions
min
typ max
I_CBO
V_CB = 50V, I_E = 0
1
Collector cutoff current
I_CEO
V_CE = 50V, I_B = 0
1
Emitter ^UN2221
5
cutoff UN2222
I_EBO
V_EB = 6V, I_C = 0
2
current _UN2223/2224
1
Collector to base voltage
V_CBO
I_C = 10µA, I_E = 0
50
Collector to emitter voltage
V_CEO
I_C = 2mA, I_B = 0
50
Forward _UN2221
current
transfer ^UN2222
40
h_FE
V_CE = 10V, I_C = 100mA
50
ratio
UN2223/2224
60
Collector to emitter saturation voltage
Output voltage high level
Output voltage low level
Transition frequency
Input
resis-
tance
UN2221/2224
UN2222
UN2223
V_CE(sat)
V_OH
V_OL
f_T
R₁
I_C = 100mA, I_B = 5mA
V_CC = 5V, V_B = 0.5V, R_L = 500Ω
4.9
V_CC = 5V, V_B = 3.5V, R_L = 500Ω
V_CB = 10V, I_E = –50mA, f = 200MHz
(–30%)
0.25
0.2
200
2.2
4.7 (+30%)
10
Resistance ratio
R₁/R₂
UN2224
0.8
1.0
1.2
0.22
Unit
µA
µA
mA
V
V
V
V
V
MHz
kΩ
1