UN2211 Datasheet, PDF (1/17 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer transistor

Transistors with built-in Resistor
UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Silicon NPN epitaxial planer transistor
For digital circuits
s ^Features
q Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
q Mini type package, allowing downsizing of the equipment and
automatic insertion through tape packing and magazine packing.
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
Unit: mm
0.65±0.15
1
3
2
s ^{Resistance by Part Number}
Marking Symbol (R₁)
q UN2211
8A
10kΩ
q UN2212
8B
22kΩ
q UN2213
8C
47kΩ
q UN2214
8D
10kΩ
q UN2215
8E
10kΩ
q UN2216
8F
4.7kΩ
q UN2217
8H
22kΩ
q UN2218
8I
0.51kΩ
q UN2219
8K
1kΩ
q UN2210
8L
47kΩ
q UN221D
8M
47kΩ
q UN221E
8N
47kΩ
q UN221F
8O
4.7kΩ
q UN221K
8P
10kΩ
q UN221L
8Q
4.7kΩ
q UN221M
EL
2.2kΩ
q UN221N
EX
4.7kΩ
q UN221T
EZ
22kΩ
q UN221V
FD
2.2kΩ
q UN221Z
FF
4.7kΩ
(R₂)
10kΩ
22kΩ
47kΩ
47kΩ
—
—
—
5.1kΩ
10kΩ
—
10kΩ
22kΩ
10kΩ
4.7kΩ
4.7kΩ
47kΩ
47kΩ
47kΩ
2.2kΩ
22kΩ
0.1 to 0.3
0.4±0.2
1:Base
2:Emitter
3:Collector
EIAJ:SC-59
Mini Type Package
Internal Connection
R1
C
B
R2
E
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
50
V
Collector to emitter voltage V_CEO
50
V
Collector current
I_C
100
mA
Total power dissipation
P_T
200
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 to +150
˚C
1