UN1231 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer transistor

Transistors with built-in Resistor
UN1231/1231A
Silicon NPN epitaxial planer transistor
For amplification of the low frequency
s ^Features
q High forward current transfer ratio h_FE.
q M type mold package.
q Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to ^UN1231
base voltage _UN1231A
V_CBO
20
60
V
Collector to ^UN1231
emitter voltage _UN1231A
V_CEO
20
50
V
Collector current
I_C
0.7
A
Peak collector current
I_CP
1.5
A
Total power dissipation
P_T*
1.0
W
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 to +150
˚C
* Printed circuit board: Copper foil area of 1cm² or more and thickness of
1.7mm for the collector portion.
6.9±0.1
1.5
1.5 R0.9
R0.9
Unit: mm
2.5±0.1
1.0
R0.7
0.85
0.55±0.1
0.45±0.05
3
2
1
2.5
2.5
1:Base
2:Collector
3:Emitter
M Type Mold Package
Internal Connection
R1(1kΩ)
C
B
R2
(47kΩ)
E
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to base voltage
UN1231
UN1231A
I_CBO
I_CEO
I_EBO
V_CBO
V_CB = 15V, I_E = 0
V_CE = 15V, I_B = 0
V_EB = 14V, I_C = 0
I_C = 10µA, I_E = 0
UN1231
Collector to emitter voltage
V_CEO
UN1231A
I_C = 1mA, I_B = 0
Forward current transfer ratio
Collector to emitter saturation voltage
Input resistance
Resistance ratio
h_FE
V_CE(sat)
R₁
R₁/R₂
V_CE = 10V, I_C = 150mA*
I_C = 100mA, I_B = 5mA*
min
typ max Unit
1
µA
10
µA
0.5
mA
20
V
60
20
V
50
800
2100
0.4
V
0.7
1
1.3
kΩ
0.021
*Pulse measurement
1