UN1221 Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer transistor

Transistors with built-in Resistor
UN1221/1222/1223/1224
Silicon NPN epitaxial planer transistor
For digital circuits
s ^Features
q Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
q M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
6.9±0.1
1.5
1.5 R0.9
R0.9
Unit: mm
2.5±0.1
1.0
0.85
s ^{Resistance by Part Number}
q UN1221
q UN1222
q UN1223
q UN1224
(R₁)
2.2kΩ
4.7kΩ
10kΩ
2.2kΩ
(R₂)
2.2kΩ
4.7kΩ
10kΩ
10kΩ
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
0.55±0.1
3
2
1
0.45±0.05
2.5
2.5
1:Base
2:Collector
3:Emitter
M Type Mold Package
Collector to base voltage
V_CBO
50
V
Collector to emitter voltage V_CEO
50
V
Collector current
I_C
500
mA
Total power dissipation
P_T
600
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 to +150
˚C
Internal Connection
C
R1
B
R2
E
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
I_CBO
Collector cutoff current
I_CEO
Emitter ^UN1221
cutoff UN1222
I_EBO
current _UN1223/1224
Collector to base voltage
Collector to emitter voltage
Forward
current
transfer
ratio
UN1221
UN1222
UN1223/1224
V_CBO
V_CEO
h_FE
Collector to emitter saturation voltage
Output voltage high level
Output voltage low level
Transition frequency
Input
resis-
tance
UN1221/1224
UN1222
UN1223
V_CE(sat)
V_OH
V_OL
f_T
R₁
Conditions
V_CB = 50V, I_E = 0
V_CE = 50V, I_B = 0
V_EB = 6V, I_C = 0
I_C = 10µA, I_E = 0
I_C = 2mA, I_B = 0
V_CE = 10V, I_C = 100mA
I_C = 100mA, I_B = 5mA
V_CC = 5V, V_B = 0.5V, R_L = 500Ω
V_CC = 5V, V_B = 3.5V, R_L = 500Ω
V_CB = 10V, I_E = –50mA, f = 200MHz
min
50
50
40
50
60
4.9
(–30%)
typ max Unit
1
µA
1
µA
5
2
mA
1
V
V
0.25
V
V
0.2
V
200
MHz
2.2
4.7 (+30%) kΩ
10
Resistance ratio
R₁/R₂
UN1224
0.8
1.0
1.2
0.22
1