UN1211 Datasheet, PDF (1/13 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer transistor

Transistors with built-in Resistor
UN1211/1212/1213/1214/1215/1216/1217/1218/1219/1210/
121D/121E/121F/121K/121L
Silicon NPN epitaxial planer transistor
For digital circuits
s ^Features
q Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
q M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s ^{Resistance by Part Number}
q UN1211
q UN1212
q UN1213
q UN1214
q UN1215
q UN1216
q UN1217
q UN1218
q UN1219
q UN1210
q UN121D
q UN121E
q UN121F
q UN121K
q UN121L
(R₁)
10kΩ
22kΩ
47kΩ
10kΩ
10kΩ
4.7kΩ
22kΩ
0.51kΩ
1kΩ
47kΩ
47kΩ
47kΩ
4.7kΩ
10kΩ
4.7kΩ
(R₂)
10kΩ
22kΩ
47kΩ
47kΩ
—
—
—
5.1kΩ
10kΩ
—
10kΩ
22kΩ
10kΩ
4.7kΩ
4.7kΩ
6.9±0.1
1.5
1.5 R0.9
R0.9
Unit: mm
2.5±0.1
1.0
R0.7
0.85
0.55±0.1
0.45±0.05
3
2
1
2.5
2.5
1:Base
2:Collector
3:Emitter
M Type Mold Package
Internal Connection
C
R1
B
R2
E
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
50
V
Collector to emitter voltage V_CEO
50
V
Collector current
I_C
100
mA
Total power dissipation
P_T
400
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 to +150
˚C
1