SK8403160L Datasheet, PDF (1/7 Pages) Panasonic Semiconductor – Silicon N-channel MOS FET

Doc No. TT4-EA-14485
Revision. 2
SK8403160L
Silicon N-channel MOS FET
For Load-switching / For DC-DC Converter
 Features
 Low Drain-source On-state Resistance : RDS(on) typ = 3.2 m  (VGS = 4.5 V)
 Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL : Level 1 compliant)
Product Standards
MOS FET
SK8403160L
3.25
3.05
8765
Unit : mm
0.22
 Marking Symbol :16
 Packaging
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
 Absolute Maximum Ratings Ta = 25 C
Parameter
Symbol Rating
Unit
Drain to Source Voltage
Gate to Source Voltage
VDS
30
VGS
20
V
Ta = 25 C, t = 10 s ^*1
29
Drain Current
Ta = 25 C, DC ^*1
Tc = 25 C
ID
18
70
A
Pulsed, Tch < 150 C ^*2
87
Total Power
Dissipation
Ta = 25 C, DC ^*1
Tc = 25 C
PD
2
28
W
Thermal Resistance
Channel to Ambient Rth(ch-a)
Channel to Case Rth(ch-c)
62.5
4.5
C / W
Channel Temperature
Tch
150
Operating ambient temperature
Topr -40 to +85 C
Storage Temperature Range
Tstg -55 to +150
Avalanche Current (Single pulse) ^*3
Avalanche Energy (Single pulse) ^*3
IAR
14.5
A
EAR
26
mJ
Note *1 Device mounted on a glass-epoxy board in Figure 1
*2 Pulse test: Ensure that the channel temperature does not exceed 150 C
*3 VDD = 24 V, VGS = 10 to 0 V, L = 0.1 mH, Tch = 25 C (initial)
1234
0.3
1.0
0.65
1. Source
2. Source
3. Source
4. Gate
5. Drain
6. Drain
7. Drain
8. Drain
Panasonic
JEITA
Code
HSSO8-F1-B
—
—
Internal Connection
8765
1234
Pin Name
1. Source
2. Source
3. Source
4. Gate
5. Drain
6. Drain
7. Drain
8. Drain
Established : 2013-01-07
Revised : 2013-05-31
Figure 1 FR4 Glass-Epoxy Board
25.4 mm × 25.4 mm × 0.8 mm
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