PUB4701 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon N-Channel Power F-MOS FET

Power Transistor Arrays (F-MOS FETs)
PUB4701
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed
q High-speed switching
q Low ON-resistance
q No secondary breakdown
q Low-voltage drive
s Applications
q Contactless relay
q Diving circuit for a solenoid
q Driving circuit for a motor
q Control equipment
q Switching power supply
s Absolute Maximum Ratings (T_C = 25°C)
Parameter
Symbol Ratings
Unit
Drain to Source breakdown voltage V_DSS
150
V
Gate to Source voltage
V_GSS
±20
V
Drain current
DC
I_D
Pulse
I_DP
±6
A
±12
A
Avalanche energy capacity
EAS^*
22.5
mJ
Allowable power
dissipation
T_C = 25°C
Ta = 25°C
P_D
15
W
3.5
Channel temperature
Storage temperature
T_ch
150
°C
T_stg
−55 to +150
°C
* _{L = 5mH, IL = 3A, 1 pulse}
s Electrical Characteristics (T_C = 25°C)
Parameter
Symbol
Conditions
Drain to Source cut-off current I_DSS
Gate to Source leakage current I_GSS
Drain to Source breakdown voltage V_DSS
Gate threshold voltage
V_th
Drain to Source ON-resistance
R_DS(on)1
R_DS(on)2
Forward transfer admittance
| Y_fs |
Diode forward voltage
V_DSF
Input capacitance (Common Source) C_iss
Output capacitance (Common Source) C_oss
Reverse transfer capacitance (Common Source) C_rss
Turn-on time (delay time)
t_d(on)
Rise time
t_r
Fall time
t_f
Turn-off time (delay time)
t_d(off)
V_DS = 120V, V_GS = 0
V_GS = ±20V, V_DS = 0
I_D = 1mA, V_GS = 0
V_DS = 10V, I_D = 1mA
V_GS = 10V, I_D = 3A
V_GS = 4V, I_D = 3A
V_DS = 10V, I_D = 3A
I_DR = 3A, V_GS = 0
V_DS = 10V, V_GS = 0, f = 1MHz
V_GS = 10V, I_D = 3A
V_DD = 100V, R_L = 33.3Ω
unit: mm
25.3±0.2
4.0±0.2
C1.5±0.5
0.5±0.15
1.0±0.25
2.54±0.2
9!2.54=22.86±0.25
1 2 3 4 5 6 7 8 9 10
0.8±0.25
0.5±0.15
G: Gate
D: Drain
S: Source
10-Lead Plastic SIL Package
min
typ
max
Unit
10
µA
±1
µA
150
V
1
2.5
V
0.42
0.6
Ω
0.5
0.7
Ω
3
5.3
S
−1.7
V
620
pF
120
pF
35
pF
10
ns
30
ns
85
ns
290
ns
1