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| PU3117 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type | |||
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Power Transistor Arrays
PUA3117 (PU3117)
Silicon NPN triple diffusion planar type
For power amplification and switching
â Features
⢠High forward current transfer ratio hFE
⢠Satisfactory linearity of forward current transfer ratio hFE
⢠NPN 3 elements
â Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO
80
V
Collector-emitter voltage (Base open) VCEO
60
V
Emitter-base voltage (Collector open) VEBO
6
V
Collector current
IC
3
A
Peak collector current
ICP
6
A
Base current
IB
1
A
Collector power dissipation
PC
15
W
Ta = 25°C
2.4
Junction temperature
Tj
150
°C
Storage temperature
Tstg â55 to +150 °C
20.2±0.3
Unit: mm
4.0±0.2
0.8±0.25
0.5±0.15
1.0±0.25
2.54±0.2
0.5±0.15
C 1.5±0.5
7 à 2.57 = 17.78±0.25
1: Emitter
2: Base
12345678
3: Collector
4: Base
5: Collector
6: Base
7: Collector
8: Emitter
SIP8-A1 Package
â Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open) VCEO IC = 25 mA, IB = 0
60
V
Collector-base cutoff current (Emitter open) ICBO VCB = 80 V, IE = 0
100 µA
Collector-emitter cutoff current (Base open) ICEO VCE = 40 V, IB = 0
100 µA
Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0
100 µA
Forward current transfer ratio
hFE VCE = 4 V, IC = 0.5 A
500
2 500 
Collector-emitter saturation voltage VCE(sat) IC = 2 A, IB = 0.05 A
1.0
V
Transition frequency
fT
VCE = 12 V, IC = 0.2 A, f = 10 MHz
50
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
â Internal Connection
3
5
2
4
6
1
7
8
Publication date: April 2003
Note) The part number in the parenthesis shows conventional part number.
SJK00007AED
1
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