PNZ334 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – PIN Photodiode

PIN Photodiodes
PNZ334 (PN334)
PIN Photodiode
For optical fiber communication systems
Features
Plastic type package (ø 5)
High coupling capability suitable for plastic fiber
High quantum efficiency
High-speed response
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Reverse voltage (DC)
Power dissipation
Operating ambient temperature
Storage temperature
Symbol Ratings Unit
V_R
30
V
P_D
100
mW
T_opr
–25 to +85
˚C
T_stg –30 to +100 ˚C
ø4.8±0.2
ø4.4±0.2
C0.2
Unit : mm
0.8
0.6
2-0.8 max.
2- 0.6±0.1
2.54
21
1: Anode
2: Cathode
Dimensions of detection area
Unit : mm
1.0
0.86
Active region
A1
ø0.1
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Dark current
I_D
V_R = 10V
0.1 10 nA
Photo current
I_L
V_R = 10V, L = 1000 lx^*1
5
7
µA
Peak sensitivity wavelength
λ_P
V_R = 10V
850
nm
Response time
t_r, t_f*2 V_R = 10V, R_L = 50Ω
2
ns
Capacitance between pins
C_t
V_R = 0V, f = 1MHz
6
pF
Acceptance half angle
θ
Measured from the optical axis to the half power point
70
deg.
*1 _{Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.}
*2 _{Switching time measurement circuit}
λ_P = 900nm
Sig.IN
50Ω
V_R = 10V
(Input pulse)
Sig.OUT
(Output pulse)
R_L
t_d
t_r
90%
10%
t_f
t_d : Delay time
t_r : Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t_f : Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
Note) The part number in the parenthesis shows conventional part number.
1