PNZ331CL Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – PIN Photodiode

PIN Photodiodes
PNZ331CL
PIN Photodiode
For optical fiber communication systems
Features
TO-18 standard type package
High coupling capability suitable for plastic fiber
High quantum efficiency
High-speed response
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Reverse voltage (DC)
Power dissipation
Operating ambient temperature
Storage temperature
Symbol Ratings Unit
V_R
30
V
P_D
50
mW
T_opr
–25 to +85
˚C
T_stg –30 to +100 ˚C
Unit : mm
1.0^{±0.1 1.0±0.1}
3-ø0.45±0.04
2
31
1: Anode
2: Case
3: Cathode
Dimensions of detection area
1.1
Unit : mm
0.88
Active region
A1
ø0.1
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Dark current
I_D
V_R = 10V
0.1 10 nA
Photo current
I_L
V_R = 10V, L = 1000 lx^*1
7
14
µA
Peak sensitivity wavelength
λ_P
V_R = 10V
900
nm
Response time
t_r, t_f*2 V_R = 10V, R_L = 50Ω
2
ns
Capacitance between pins
C_t
V_R = 10V
3
pF
Photodetection sensitivity
R
V_R = 10V, λ = 800nm
0.55
A/W
Acceptance half angle
θ
Measured from the optical axis to the half power point
70
deg.
Photodetection surface shape D Effective detection area
0.88
mm
Note 1) Spectral sensitivity: Sensitivity at wavelengths exceeding 400 nm as a percentage of maximum sensitivity is 100%
Note 2) This product is not designed to withstand electromagnetic radiation or heavy-charge particles.
Note 3) Difficult to guarantee compliance with moisture resistance standard (MIL-STD-202D)
*1 _{Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.}
*2 _{Switching time measurement circuit (see figure below)}
Sig.IN
V_R = 10V
(Input pulse)
λ_P = 800nm
50_,Ω _,,,
Sig.OUT
,,,,^RL
(Output pulse) _td
t_r
90%
10%
t_f
t_d : Delay time
t_r : Rise time (Time required for the collector photo current
to increase from 10% to 90% of its final value)
t_f : Fall time (Time required for the collector photo current
to decrease from 90% to 10% of its initial value)
1