PNZ330CL Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – PIN Photodiode

PIN Photodiodes
PNZ330CL (PN330CL)
Silicon planar type
For optical control systems
■ Features
• TO-18 standard type package
• High coupling capabillity suitable for plastic fiber
• High quantum efficiency
• High-speed response
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage
Power dissipation
Operating ambient temperature
Storage temperature
V_R
30
V
P_D
100
mW
T_opr −25 to +85 °C
T_stg −30 to +100 °C
φ5.35
+0.2
-0.1
φ4.2
+0.1
-0.2
Unit: mm
1.0^±0.15
2-φ0.45±0.05
1.0_-0+.10.15
21
2.54±0.2 1: Anode
2: Cathode
MTRLR102-001 Package
■ Electrical-Optical Characteristics T_a = 25°C ± 3°C
Parameter
Dark current
Photocurrent ^*1
Peak emission wavelength
Rise time ^*2
Fall time ^*2
Terminal capacitance
Half-power angle
Symbol
I_D
I_L
λ_p
t_r
t_f
C_t
θ
Conditions
V_R = 10 V
V_R = 10 V, L = 1 000 lx
V_R = 10 V
V_R = 10 V, R_L = 50 Ω
V_R = 0 V, f = 1 MHz
The angle from which photocurrent
becomes 50%
Min Typ Max Unit
0.1 10.0 nA
7
10
µA
850
nm
2
ns
2
ns
7
pF
70
°
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%.
3. This device is designed be disregarded radiation.
4. *1: Source: Tungsten (color temperature 2 856 K)
*2: Switching time measurement circuit
Sig. in
50 Ω
V_R
(Input pulse)
Sig. out
(Output pulse)
R_L
t_r
90%
10%
t_f
t_r: Rise time
t_f: Fall time
Publication date: April 2004
Note) The part number in the parenthesis shows conventional part number.
SHE00039BED
1