PNZ327 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – PIN Photodiode

PIN Photodiodes
PNZ327 (PN327)
PIN Photodiode
For optical control systems
Features
Fast response which is well suited to high speed modulated light
detection : t_r, t_f = 50 ns (typ.)
High sensitivity, high reliability
Peak sensitivity wavelength matched with infrared light emitting
diodes : λ_P = 900 nm (typ.)
Wide detection area, wide acceptance half angle : θ = 70 deg. (typ.)
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Reverse voltage (DC)
Power dissipation
Operating ambient temperature
Storage temperature
Symbol Ratings Unit
V_R
30
V
P_D
100
mW
T_opr
–30 to +85
˚C
T_stg – 40 to +100 ˚C
4.6±0.2
Chip
2.3
Unit : mm
1.32
2- 0.6±0.1
0.5
2.54
12
1: Anode
2: Cathode
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Dark current
Photo current
Sensitivity to infrared emitters
Peak sensitivity wavelength
Response time
Response time
I_D
I_L
S_IR*2
λ_P
t_r, t_f*3
t_r, t_f*3
V_R = 10V
V_R = 10V, L = 1000 lx^*1
V_R = 5V, H = 0.1 mW/cm²
V_R = 10V
V_R = 10V, R_L = 1kΩ
V_R = 10V, R_L = 100kΩ
5
50 nA
70
µA
4.5
µA
900
nm
50
ns
5
µs
Capacitance between pins
C_t
V_R = 0V, f = 1MHz
70
pF
Acceptance half angle
θ
Measured from the optical axis to the half power point
70
deg.
*1 _{Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.}
*2 _{Light source : λ = 940 nm}
*3 _{Switching time measurement circuit}
λ_P = 800nm
Sig.IN
50Ω
V_R = 10V
(Input pulse)
Sig.OUT
(Output pulse)
R_L
t_d
t_r
90%
10%
t_f
t_d : Delay time
t_r : Rise time (Time required for the collector photo current
to increase from 10% to 90% of its final value)
t_f : Fall time (Time required for the collector photo current
to decrease from 90% to 10% of its initial value)
Note) The part number in the parenthesis shows conventional part number.
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