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PNZ323 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon planar type
PIN Photodiodes
PNZ323 (PN323)
Silicon planar type
For optical control systems
■ Features
• Fast response which is well suited to high speed modulated light
detection: tr , tf = 50 ns (typ.)
• High sensitivity, high reliability
• Peak emission wavelength matched with infrared light emitting
diodes: λp = 900 nm (typ.)
• Wide detection area, wide half-power angle: θ = 70° (typ.)
• Adoption of visible light cutoff resin
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage
Power dissipation
Operating ambient temperature
Storage temperature
VR
30
V
PD
100
mW
Topr −30 to +85 °C
Tstg −40 to +100 °C
Chip
4.6±0.2
(2.3)
Unit: mm
(1.32)
(2-0.6±0.1)
0.5
(2.54)
1
2
1: Anode
2: Cathode
LSRLR102NC-001 Package
■ Electrical-Optical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Dark current
Photocurrent *1
Sensitivity to infrared radiation *2
Peak emission wavelength
Rise time *2
Fall time *2
Rise time *2
Fall time *2
Terminal capacitance
Half-power angle
ID
VR = 10 V
IL
VR = 10 V, L = 1 000 lx
SIR VR = 5 V, H = 0.1 mW/cm2
λp
VR = 10 V
tr
VR = 10 V, RL = 1 kΩ
tf
tr
VR = 10 V, RL = 100 kΩ
tf
Ct
VR = 0 V, f = 1 MHz
θ The angle from which photocurrent
becomes 50%
Min Typ Max Unit
5
50
nA
55
µA
4.5 6.0
µA
900
nm
50
ns
50
ns
5
µs
5
µs
70
pF
70
°
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%.
3. This device is designed be disregarded radiation.
4. *1: Source: Tungsten (color temperature 2 856 K)
*2: Source: Infrared radiation (λ = 940 nm)
*3: Switching time measurement circuit
Sig. in
λP = 900 nm
50 Ω
VR
(Input pulse)
Sig. out
(Output pulse)
RL
tr
90%
10%
tf
tr: Rise time
tf: Fall time
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2004
SHE00036BED
1