PNZ313B Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – PIN Photodiode

PIN Photodiodes
PNZ313B
PIN Photodiode
For optical control systems
Features
Fast response which is well suited to high speed modulated light
detection : t_r, t_f = 50 ns (typ.)
High sensitivity, high reliability
Peak sensitivity wavelength matched with infrared light emitting
diodes : λ_P = 960 nm (typ.)
Wide detection area, wide acceptance half angle : θ = 65 deg. (typ.)
Adoption of visible light cutoff resin
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol Ratings Unit
Reverse voltage (DC)
Power dissipation
Operating ambient temperature
Storage temperature
V_R
30
V
P_D
100
mW
T_opr
–30 to +85
˚C
T_stg – 40 to +100 ˚C
7.0±0.5
Unit : mm
Anode mark ø1.6
Device
center
2-1.2±0.15
2-0.6±0.15
0.41±0.15
2
1
5.08±0.25
1: Cathode
2: Anode
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Dark current
I_D
V_R = 10V
5
50 nA
Photo current
I_L
V_R = 10V, L = 1000 lx^*1
15 25
µA
Peak sensitivity wavelength
λ_P
V_R = 10V
960
nm
Response time
t_r, t_f*2 V_R = 10V, R_L = 1kΩ
50
ns
Response time
t_r, t_f*2 V_R = 10V, R_L = 100kΩ
5
µs
Capacitance between pins
C_t
V_R = 0V, f = 1MHz
70
pF
Acceptance half angle
θ
Measured from the optical axis to the half power point
65
deg.
*1 _{Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.}
*2 _{Switching time measurement circuit}
Sig.IN
V_R = 10V
(Input pulse)
λ_P = 800nm
50_,Ω _,,,
Sig.OUT
(Output pulse)
,,,,^RL
t_d
t_r
90%
10%
t_f
t_d : Delay time
t_r : Rise time (Time required for the collector photo current
to increase from 10% to 90% of its final value)
t_f : Fall time (Time required for the collector photo current
to decrease from 90% to 10% of its initial value)
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