PNZ313 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon planar type For optical control systems

PIN Photodiodes
PNZ313 (PN313)
Silicon planar type
For optical control systems
■ Features
• Fast response which is well suited to high speed modulated light
detection: t_r , t_f = 50 ns (typ.)
• High sensitivity, high reliability
• Peak emission wavelength matched with infrared light emitting
diodes: λ_p = 940 nm (typ.)
• Wide detection area, wide half-power angle: θ = 65° (typ.)
• Adoption of visible light cutoff resin
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage
Power dissipation
Operating ambient temperature
Storage temperature
V_R
30
V
P_D
100
mW
T_opr −30 to +80 °C
T_stg −40 to +80 °C
7.0±0.5
Unit: mm
Anode mark (φ1.6)
Device
center
2-1.2±0.15
2-0.6±0.15
0.41±0.15
2
1
5.08±0.25
1: Cathode
2: Anode
LSTFR102NC-001 Package
■ Electrical-Optical Characteristics T_a = 25°C ± 3°C
Parameter
Dark current
Photocurrent ^*1
Peak emission wavelength
Rise time ^*2
Fall time ^*2
Rise time ^*2
Fall time ^*2
Terminal capacitance
Half-power angle
Symbol
I_D
I_L
λ_p
t_r
t_f
t_r
t_f
C_t
θ
Conditions
V_R = 10 V
V_R = 10 V, L = 1 000 lx
V_R = 10 V
V_R = 10 V, R_L = 1 kΩ
V_R = 10 V, R_L = 100 kΩ
V_R = 0 V, f = 1 MHz
The angle from which photocurrent
becomes 50%
Min Typ Max Unit
5
50
nA
35 50
µA
940
nm
50
ns
50
ns
5
µs
5
µs
70
pF
65
°
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. _*1: Source: Tungsten (color temperature 2 856 K)
*2: ^{Switching time measurement circuit}
Sig. in
λ_P = 800 nm
50 Ω
V_R = 10 V
(Input pulse)
Sig. out
R_L
(Output pulse)
t_d
t_r
90%
10%
t_f
t_d: Delay time
t_r: Rise time (Time required for the collector photocurrent
to increase from 10% to 90% of its final value)
t_f: Fall time (Time required for the collector photocurrent
to decrease from 90% to 10% of its initial value)
Publication date: April 2004
Note) The part number in the parenthesis shows conventional part number.
SHE00033BED
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