PNZ312D Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Dual Division Silicon PIN Photodiode

PIN Photodiodes
PNZ312D
Dual Division Silicon PIN Photodiode
For optical information systems
Features
Fast response : t_r, t_f = 10 ns (typ.)
Good photo current linearity
Low dark current : I_D = 20 nA (max.)
Small size plastic package (flat type)
Adoption of visible light cutoff resin
Applications
Auto focus sensor for still cameras and video cameras etc.
Distance measuring systems
Position sensor for automatic assembly lines
Eye sensor for industrial robots
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Reverse voltage (DC)
Power dissipation
Operating ambient temperature
Storage temperature
Symbol Ratings Unit
V_R
30
V
P_D
30
mW
T_opr
–25 to +85
˚C
T_stg –30 to +100 ˚C
5.0±0.1
2.54±0.1
4
3
Unit : mm
1.8±0.3
1.0±0.2
A
B
4-0.6
+0.1
–0.2
4-0.5±0.1
1
10˚
1.0
0.6
2
10˚
0.2
+0.1
–0.05
5˚
5˚
1: Anode A
2: Common Cathode
3: Anode B
4: Common Cathode
Note) The PNZ312D package consists of a visible
light cutoff resin. Therefore the chips (A and B)
shown in the drawing cannot actually be seen.
Dimensions of detection area
3.5
1.6
1.6
0.04
Unit : mm
A
B
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Reverse voltage (DC)
V_R I_R = 10µA
30
V
Dark current
Photo current
Peak sensitivity wavelength
Response time
I_D
I_L*3
λ_P
t_r, t_f*2
V_R = 10V
V_R = 10V, L = 1000 lx^*1
V_R = 10V
V_R = 10V, R_L = 1kΩ
20 nA
8
12
µA
940
nm
10
ns
Capacitance between pins
C_t
V_R = 10V, f = 1MHz
5
pF
Acceptance half angle
θ
Measured from the optical axis to the half power point
65
deg.
Note) The indicated values for absolute maximum ratings and electro-optical characteristics are the values
corresponding to individual elements.
*1 _{Measurements were made using a white tungsten lamp (color temperature T = 2856K) as a light source.}
*2 _{Semiconductor laser light source ( λ = 800 nm )}
*3 _{Photo current measurement circuit}
+10V
,, ,,, ^R1
R₂
R₁ = R₂
1