PNZ3112 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – PIN Photodiode

PIN Photodiodes
PNZ3112
PIN Photodiode
For optical control systems
Features
High sensitivity and low dark current
For one-dimensional light-point position detection
Good positional linearity
Small plastic package
Adoption of visible light cutoff resin
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol Ratings Unit
Reverse voltage (DC)
Power dissipation
Operating ambient temperature
Storage temperature
V_R
30
V
P_D
30
mW
T_opr
–25 to +85
˚C
T_stg –30 to +100 ˚C
5.0±0.1
2.54±0.1
4
3
Unit : mm
1.8±0.3
0.8±0.2
0.6±0.1
4-0.6
+0.1
–0.2
4-0.5±0.15
1
2
10˚ _10˚
0.2^{+–00..015}
5˚
5˚ ^{1: Anode A1}
2: Common cathode
3: Anode A2
4: Common cathode
Dimensions of detection area
3.0
Unit : mm
2.5
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
Dark current
Photo current
Peak sensitivity wavelength
Response time
Capacitance between pins
Resistance between electrodes
Gradient of position signal
I_D
I_L
λ_P
t_r, t_f*2
C_t
R_S*3
a^*4
V_R = 1V
V_R = 1V, L = 1000 lx^*1
V_R = 1V
V_R = 1V, R_L = 1kΩ
V_R = 1V, f = 1MHz
V_R = 1V, V_a = 0.5V
V_R = 1V
*1 _{IL = I1 + I2}
Note: I₁ and I₂ are the photoelectric currents of anodes A1 and A2.
White tungsten lamp light source (color temperature T = 2856K)
*2 _{GaAs light emitting diode light source ( λ = 800nm)}
*3 _{Va is the potential difference between anodes A1 and A2.}
*4 _{a = | (I1–I2)/(I1+I2) |}
Note :Incident light is at the position 100 µm from the reference position.
The reference position is the position where I₁ = I_2.
min typ max Unit
2 nA
16 20
µA
940
nm
10
µs
10
pF
120
kΩ
0.08
1