PNZ303 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – PIN Photodiode For optical control systems

PIN Photodiodes
PNZ303 (PN303)
PIN Photodiode
For optical control systems
Features
Fast response which is well suited to high speed modulated light
detection : t_r, t_f = 50 ns (typ.)
High photodetection sensitivity and wide dynamic sensitivity
Peak sensitivity wave length is 900 nm and wide spectral sensitivity
Wide photodetection area and wide directional angle
Highly reliable TO-5 standard type package
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Reverse voltage (DC)
Power dissipation
Operating ambient temperature
Storage temperature
Symbol Ratings Unit
V_R
30
V
P_D
100
mW
T_opr – 30 to +100 ˚C
T_stg – 40 to +100 ˚C
ø9.4 max.
ø8.1±0.2
ø5.9±0.2
Unit : mm
Glass window
2-ø0.45±0.1
2
1
5.08±0.5
1: Anode
2: Cathode
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Dark current
I_D
V_R = 10V
5
50 nA
Photo current
I_L
V_R = 10V, L = 1000 lx^*1
50 70
µA
Peak sensitivity wavelength
λ_P
V_R = 10V
900
nm
Response time
t_r, t_f*2 V_R = 10V, R_L = 1kΩ
50
ns
Response time
t_r, t_f*2 V_R = 10V, R_L = 100kΩ
5
µs
Capacitance between pins
C_t
V_R = 0V, f = 1MHz
70
pF
Acceptance half angle
θ
Measured from the optical axis to the half power point
55
deg.
*1 _{Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.}
*2 _{Switching time measurement circuit}
λ_P = 800nm
Sig.IN
50Ω
V_R = 10V
(Input pulse)
Sig.OUT
(Output pulse)
R_L
t_d
t_r
90%
10%
t_f
t_d : Delay time
t_r : Rise time (Time required for the collector photo current
to increase from 10% to 90% of its final value)
t_f : Fall time (Time required for the collector photo current
to decrease from 90% to 10% of its initial value)
Note) The part number in the parenthesis shows conventional part number.
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