PNZ263L Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Darlington Phototransistor

Darlington Phototransistors
PNZ263L
Darlington Phototransistor
For optical control systems
Features
Darlington output, high sensitivity
Small size, thin side-view type package
Adoption of visible light cutoff resin
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Collector to emitter voltage
Emitter to collector voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Symbol Ratings Unit
V_CEO
20
V
V_ECO
5
V
I_C
30
mA
P_C
100
mW
T_opr
–25 to +80
˚C
T_stg –30 to +100 ˚C
3.0±0.3
Unit : mm
ø1.1
R0.5
1.95±0.25
1.4±0.2
0.9
0.5
2-0.8 max.
2-0.8 max.
2-0.5±0.15
2
1
2.54
0.3±0.15
1: Collector
2: Emitter
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Dark current
I_CEO V_CE = 10V
0.1 0.5 µA
Sensitivity to infrared emitters S_IR*1 V_CE = 10V, H = 3.75 µW/cm²
60 200
µA
Peak sensitivity wavelength
λ_P
V_CE = 10V
850
nm
Acceptance half angle
θ
Measured from the optical axis to the half power point
25
deg.
Response time
t_r, t_f*2 V_CC = 10V, I_C = 1mA, R_L = 100Ω
Collector saturation voltage V_CE(sat) I_C = 100µA, H = 3.75 µW/cm²
150
µs
0.7 1.5 V
*1 _{Measurements were made using infrared light (λ = 940 nm) as a light source.}
*2 _{Switching time measuring circuit}
Sig.IN
50Ω
V_CC
(Input pulse)
Sig.OUT _{(Output pulse)}
R_L
t_d
t_r
90%
10%
t_f
t_d : Delay time
t_r : Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t_f : Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
1