PNZ158 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon planar type For optical control systems

Phototransistors
PNZ158 (PN158)
Silicon planar type
For optical control systems
■ Features
• High sensitivity
• Fast response: t_r = 4 µs (typ.)
• Wide spectral sensitivity characteristics, suited for detecting various
kinds of LEDs
• Small size, thin side-view type package
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-emitter voltage (Base open) V_CEO
20
V
Emitter-collector voltage (Base open) V_ECO
5
V
Collector current
I_C
20
mA
Collector power dissipation
P_C
100
mW
Operating ambient temperature
T_opr −25 to +85 °C
Storage temperature
T_stg −30 to +100 °C
(φ2.4)
4.5±0.3
Unit: mm
2.9±0.25
(1.2)
(0.9)
1.7±0.2
(0.8)
2-1.2±0.3
2-0.45±0.15
1
2
2.54
(2-R0.6)
(R1.2)
0.45±0.15
1: Emitter
2: Collector
LSTLR102-002 Package
■ Electrical-Optical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Photocurrent ^*1
I_CE(L) V_CE = 10 V, L = 500 lx
1.0 4.0
µA
Dark current
I_CEO V_CE = 10 V
0.01 1.00 µA
Peak sensitivity wavelength
λ_p
V_CE = 10 V
800
nm
Half-power angle
θ The angle from which photocurrent
40
°
becomes 50%
Rise time ^*2
Fall time ^*2
Collector-emitter saturation voltage ^*1
t_r
t_f
V_CE(sat)
V_CC = 10 V, I_CE(L) = 5 mA, R_L = 100 Ω
I_CE(L) = 1 mA, L = 1 000 lx
4
10
µs
4
10
µs
0.2 0.5
V
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. _*1: Source: Tungsten (color temperature 2 856 K)
*2: ^{Switching time measurement circuit}
Sig. in
50 Ω
V_CC
(Input pulse)
Sig. out
R_L
(Output pulse)
t_r
90%
10%
t_f
t_r: Rise time
t_f: Fall time
Publication date: November 2004
Note) The part number in the parenthesis shows conventional part number.
SHE00022CED
1