PNZ155 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN Phototransistor

Phototransistors
PNZ155 (PN155)
Silicon NPN Phototransistor
For optical control systems
Features
High sensitivity
Wide spectral sensitivity, suited for detecting GaAs LEDs
Low dark current
Flat type plastic package
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Collector to emitter voltage
Emitter to collector voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Symbol Ratings Unit
V_CEO
V_ECO
I_C
P_C
T_opr
T_stg
20
V
5
V
10
mA
100
mW
–25 to +85 ˚C
–30 to +100 ˚C
4.5±0.15
3.5±0.15
Unit : mm
2.1±0.15
1.6±0.15
0.8±0.1
2-1.2±0.3
2-0.45±0.15
1
2
0.45±0.2
2.54±0.2
1: Emitter
2: Collector
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Dark current
I_CEO V_CE = 10V
0.01 1
µA
Collector photo current
I_CE(L)*1 V_CE = 10V, L = 100 lx
0.05 0.2
mA
Peak sensitivity wavelength
λ_P
V_CE = 10V
800
nm
Acceptance half angle
θ
Measured from the optical axis to the half power point
70
deg.
Response time
t_r, t_f*2 V_CC = 10V, I_CE(L) = 1mA, R_L = 100Ω
4
µs
Collector saturation voltage V_CE(sat)*1 I_CE(L) = 1mA, L = 1000 lx
0.2 0.5 V
*1 _{Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.}
*2 _{Switching time measurement circuit}
Sig.IN
50Ω_;;;;
V_CC
(Input pulse)
;; ^{Sig.OUT (Output pulse)}
R_L
t_d
t_r
90%
10%
t_f
t_d : Delay time
t_r : Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t_f : Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
Note) The part number in the parenthesis shows conventional part number.
1