PNZ154 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN Phototransistor

Phototransistors
PNZ154 (PN154)
Silicon NPN Phototransistor
For optical control systems
Features
High sensitivity
Fast response : t_r = 4 µs (typ.)
Wide spectral sensitivity, suited for detecting various kinds of LEDs
Small size, thin side-view type package
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Collector to emitter voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Symbol Ratings Unit
V_CEO
I_C
P_C
20
V
20
mA
100
mW
T_opr
–25 to +85
˚C
T_stg –30 to +100 ˚C
4.5±0.3
ø2.2
Unit : mm
2.9±0.25
1.2
1.7±0.2
0.9
0.8
2-1.2±0.3
2-0.45±0.15
0.45±0.15
1
2
2.54±0.2
R0.8
R0.6
1: Emitter
2: Collector
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Dark current
I_CEO V_CE = 10V
0.01 0.2 µA
Collector photo current
I_CE(L) V_CE = 10V, L = 500 lx^*1
1
4
mA
Peak sensitivity wavelength
λ_P
V_CE = 10V
800
nm
Acceptance half angle
θ
Measured from the optical axis to the half power point
27
deg.
Response time
t_r, t_f*2 V_CC = 10V, I_CE(L) = 5mA, R_L = 100Ω
Collector saturation voltage V_CE(sat) I_CE(L) = 1mA, L = 1000 lx^*1
4
10 µs
0.2 0.5 V
*1 _{Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.}
*2 _{Switching time measurement circuit}
Sig.IN
50Ω
V_CC
(Input pulse)
Sig.OUT _{(Output pulse)}
R_L
t_d
t_r
90%
10%
t_f
t_d : Delay time
t_r : Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t_f : Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
Note) The part number in the parenthesis shows conventional part number.
1