PNZ150L Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN Phototransistor

Phototransistors
PNZ150L
Silicon NPN Phototransistor
For optical control systems
Features
High sensitivity
Wide spectral sensitivity, suited for detecting GaAs LEDs
Low dark current
Small size, thin side-view type package
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Collector to emitter voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Symbol Ratings Unit
V_CEO
I_C
P_C
T_opr
T_stg
20
V
20
mA
100
mW
–25 to +85 ˚C
–30 to +100 ˚C
4.5±0.3
ø3.5±0.2
Unit : mm
4.2±0.3
2.3
1.9
2-1.12
1.2
2-0.45±0.15
0.4±0.15
2-0.6±0.15
2-0.45±0.15
12
2.54
R1.75
1: Emitter
2: Collector
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Dark current
I_CEO V_CEO = 10V
0.01 0.2 µA
Sensitivity to infrared emitters S_IR*1 V_CE = 10V, H = 15µW/cm²
16
µA
Collector saturation voltage V_CE(sat) V_CE = 10V, H = 15µW/cm²
0.2 0.5 V
Peak sensitivity wavelength
λ_P
V_CEO = 10V
800
nm
Response time
t_r, t_f*2 V_CC = 10V, I_CE(L) = 5mA, R_L = 100Ω
4
µs
Acceptance half angle
θ
Measured from the optical axis to the half power point
35
deg.
*1 _{Measurements were made using infrared light (λ = 940 nm) as a light source.}
*2 _{Response time measurement circuit}
Sig.IN
50Ω
V_CC
(Input pulse)
Sig.OUT
R_L
(Output pulse) _td
t_r
90%
10%
t_f
t_d : Delay time
t_r : Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t_f : Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
1