PNZ150 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon planar type For optical control systems

Phototransistors
PNZ150 (PN150)
Silicon planar type
For optical control systems
■ Features
• High sensitivity
• Wide spectral sensitivity characteristics, suited for detecting GaAs
LEDs
• Low dark current
• Side-view plastic mold type package
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-emitter voltage (Base open) V_CEO
20
V
Collector current
I_C
20
mA
Collector power dissipation
P_C
100
mW
Operating ambient temperature
T_opr −25 to +85 °C
Storage temperature
T_stg −30 to +100 °C
φ3.5±0.2
4.5±0.3
Unit: mm
4.2±0.3
(2.3) (1.9)
2-0.98±0.2
2-0.45±0.15
0.45±0.15
(2.54)
(R1.75)
(1.2)
12
1: Emitter
2: Collector
LSTLR102-003 Package
■ Electrical-Optical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Photocurrent ^*1
I_CE(L) V_CE = 10 V, L = 500 lx
1.0 3.0
mA
Dark current
I_CEO V_CE = 10 V
0.01 1.00 µA
Peak emission wavelength
λ_p
V_CE = 10 V
800
nm
Half-power angle
θ The angle from which photocurrent
35
°
becomes 50%
Rise time ^*2
Fall time ^*2
Collector-emitter saturation voltage ^*1
t_r
t_f
V_CE(sat)
V_CC = 10 V, I_CE(L) = 5 mA, R_L = 100 Ω
I_CE(L) = 1 mA, L = 1 000 lx
4
µs
4
µs
0.2 0.5
V
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%.
3. This device is designed be dis regarded radiation.
4. *1: Source: Tungsten (color temperature 2 856 K)
*2: Switching time measurement circuit
Sig. in
50 Ω
V_CC
(Input pulse)
Sig. out _{(Output pulse)}
R_L
t_r
90%
10%
t_f
t_r: Rise time
t_f: Fall time
Publication date: April 2004
Note) The part number in the parenthesis shows conventional part number.
SHE00018BED
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