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PNZ147 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon planar type
Phototransistors
PNZ147 (PN147)
Silicon planar type
For optical control systems
■ Features
• High sensitivity
• Wide spectral sensitivity characteristics, suited for detecting GaAs
LEDs
• Fast response: tr , tf = 3 µs (typ.)
• Small size designed for easier mounting to printed circuit board
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-emitter voltage (Base open) VCEO
20
V
Emitter-collector voltage (Base open) VECO
5
V
Collector current
IC
20
mA
Collector power dissipation
PC
50
mW
Operating ambient temperature
Topr −25 to +85 °C
Storage temperature
Tstg −30 to +100 °C
Unit: mm
1
45°
Type number : cathode mark (Green)
10.0 min.
10.0 min.
3.2±0.3 3.2±0.3
(φ1.8)
2
(1.8) 2.8±0.2 (1.8)
R0.9
1: Collector
2: Emitter
LTTLW102-001 Package
■ Electrical-Optical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Photocurrent *1
ICE(L)1 *2 VCE = 10 V, L = 2 lx
3
12
µA
ICE(L)2 VCE = 10 V, L = 500 lx
3.5
mA
Dark current
ICEO VCE = 10 V
0.01 0.50 µA
Peak emission wavelength
Half-power angle
λp
VCE = 10 V
θ The angle from which photocurrent
800
nm
24
°
becomes 50%
Rise time *3
Fall time *3
Collector-emitter saturation voltage *1
tr
tf
VCE(sat)
VCC = 10 V, ICE(L) = 5 mA, RL = 100 Ω
ICE(L) = 1 mA, L = 1 000 lx
3
10
µs
3
10
µs
0.2 0.5
V
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%.
3. This device is designed be disregarded radiation.
5. *1: Source: Tungsten (color temperature 2 856 K)
*2: Rank classification
Rank
Q
R
S
ICE(L) (µA)
3.0 to 11.0
7.0 to 24.0
>16.0
*3: Switching time measurement circuit
Sig. in
VCC
(Input pulse)
50 Ω
Sig. out (Output pulse)
RL
tr
90%
10%
tf
tr: Rise time
tf: Fall time
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2004
SHE00017BED
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